GE-FANUC VMIVME-5565-010 Reflective Memory Node Card

Model:VMIVME-5565-010

Manufacturer:GE-FANUC

Memory Type:Reflective

Node Capacity:Up to 4 nodes

Operating Temperature:-40°C to +85°C

Power Consumption:Less than 10W

Form Factor:VME Bus

Memory Speed:DDR3

Data Transfer Rate:Up to 800 MB/s

    The GE FANUC VMIVME-5565-010 Reflective Memory Node Card offers unparalleled performance and reliability for mission-critical applications in industrial automation. This compact, high-speed memory node is engineered to enhance system efficiency and scalability.

    Featuring advanced reflective memory technology, it provides robust data replication across multiple nodes, ensuring fault tolerance and uninterrupted operation even in harsh environments.

    Designed for seamless integration into VMEbus or PCI/PCIe-based systems, this card supports a wide range of applications from factory automation to process control, boasting compatibility with leading industrial protocols and standards.

    Engineered for extreme temperatures and humidity levels, the GE FANUC VMIVME-5565-010 is built to withstand the rigors of industrial environments, delivering consistent performance year-round.

    Backed by comprehensive technical support and industry-leading MTBF rating, this card ensures minimal downtime and maximum productivity, making it an indispensable component for any industrial control system seeking peak performance and reliability.